Magnetoelectric photocurrent generated by direct interband transitions in InGaAs/InAlAs two-dimensional electron gas.

Title Theory of magnetoelectric photocurrent generated by direct interband transitions in a semiconductor quantum well

Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures

The effects of the channel electron density on the interband optical transitions of strained (x50.6 and 0.65! and lattice-matched (x50.53) InxGa12xAs/In0.52Al0.48As/InP high-electron-mobility transistor structures have been investigated by phototransmittance at room temperature. Analysis of the ground and first excited transitions for low and high densities, respectively, enabled a separate est...

Resonant phonon-assisted depopulation in type-I and type-II intersubband laser heterostructures

We show that LO phonon-assisted interband tunneling in type-II intersubband laser heterostructures is more efficient for the fast depopulation of the lower lasing states than the corresponding intersubband process in type-I double quantum wells (DQW). The main peak of the electron-phonon resonance in type-II DQW corresponds to electron transitions from the lowest electron-like subband to the to...

Simulation of InAlAs/InGaAs High Electron Mobility Transistors with a Single Set of Physical Parameters

Simulation results of InAlAs/InGaAs High Electron Mobility Transistors based on both GaAs and InP substrates are presented using the two-dimensional device simulator MINIMOS-NT. Three different HEMT technologies are evaluated by simulation and a single set of physical parameters is verified. The critical interaction of selfheating, impact ionization, SiN surface effects, and material compositio...

Surface roughness in InGaAs channels of high electron mobility transistors depending on the growth temperature: Strain induced or due to alloy decomposition

InAlAs/InGaAs/InP based high electron mobility transistor devices have been structurally and electrically characterized, using transmission electron microscopy and Raman spectroscopy and measuring Hall mobilities. The InGaAs lattice matched channels, with an In molar fraction of 53%, grown at temperatures lower than 530 °C exhibit alloy decomposition driving an anisotropic InGaAs surface roughn...